一种基于GaAs pHEMT的宽带低功耗微波混频器设计
一种基于GaAs pHEMT的宽带低功耗微波混频器设计(任务书,开题报告,外文翻译,论文16300字)
摘要
近年来，随着无线移动通信系统的迅速发展，人们对高度集成、高性能、高宽带和能够适应多种通信标准的接收机的研究愈发热门。同时，随着新一代通信技术(5G)的研发，传统基于CMOS工艺的器件因其工作频率和噪声性能的限制，已经不能满足超高频和低噪声的微波电路设计要求，而基于赝调制掺杂异质结场效应晶体管(pHEMT)工艺的器件由于具有较高的传导电子迁移率和温度稳定性，对于高宽带、高频率、低噪声的微波电路设计有着优越性。所以，基于pHEMT工艺的射频集成前端成为近年来的研究热点。而作为射频前端电路的核心部分，混频器的设计十分重要，其性能直接影响到整个射频前端电路的性能优劣。
为实现低功耗目的，本文对传统的堆叠型Gilbert有源混频器结构做出改进，利用折叠型结构代替堆叠型结构，从而降低了对工作电压的要求，在转换增益一定的情况下，有效地实现了低功耗要求。
本次设计采用SANAN公司的0.15μmpHEMT工艺库，使用ADS仿真软件设计电路结构和仿真性能参数。最终完成了射频输入频率为1GHz—4GHz，中频输出频率为50MHz的新型折叠型Gilbert有源混频器的设计，通过对各指标的折衷和参数不断优化，最终实现了在工作电压为1.5V时，转换增益在3GHz带宽内大于10dB，噪声系数小于5dB，1dB压缩点为-10dBm，输入三阶交调点为4.147dBm，功耗为67.23mW，满足所提出的性能指标要求。
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关键词：GaAs pHEMT工艺，Gilbert有源混频器，低功耗，宽带
Abstract
In recent years, with the rapid development of wireless mobile communication systems, the research on highly integrated, high-performance, high-bandwidth, and receivers capable of adapting to various communication standards has become increasingly popular. At the same time, with the development of next-generation communication technology (5G), traditional CMOS-based devices can no longer satisfy the ultra-high-frequency and low-noise microwave circuit design requirements due to the limitations of their operating frequency and noise performance, However, The device which based on pHEMT technology has advantages of high-bandwidth, high-frequency, and low-noise microwave circuit design because of its high conduction electron mobility and temperature stability. Therefore, the RF integrated front-end based onpHEMT technology is known as a research hotspot in recent years. As a core part of the RF front-end circuit, the design of the mixer is very important, and its performance directly affects the performance of the entire RF front-end circuit.
[资料来源：https://www.doc163.com]
In order to achieve low power consμmption, the structure of the traditional stacked Gilbert active mixer is presented in this thesis. Instead of a stacked structure, a folded structure is used to reduce the operating voltage requirements. With a certain conversion gain, effectively achieve low power requirements.
This design bases on SANAN's 0.15μmpHEMTtechnology library and uses ADS simulation software to design the circuit structure and simulation performance parameters. The structure of the new folded Gilbert active mixer with an input frequency of 1GHz - 4GHz and an IF output frequency of 50MHz was presented. Through the trade-off between parameters and constant optimization, the transfer gain is greater than 10dB cover the 3GHz bandwidth, the noise figure is less than 5dB, the 1dB compression point is -10dBm, the input third-order intercept point is 4.147dBm, and the power consμmption is 67.23mW from a 1.5V supply, which satisfies the proposed performance index requirement.
KeyWords: GaAs pHEMTtechnology, Gilbert active mixer, low power consμmption, wideband
目录
第1章绪论 1
1.1 选题背景及意义 1
1.2 国内外研究现状 1
1.3 本文研究工作及内容安排 2
第2章 GaAs工艺及混频器基本原理 3
2.1 GaAs工艺 3
2.2 混频器基本工作原理 3
2.3 混频器的性能指标 4
2.3.1 转换增益 4
2.3.2 线性度 5
2.3.3 噪声系数 7 [资料来源：http://www.doc163.com]
2.3.4 端口隔离度 8
2.4 混频器结构介绍 8
2.4.1 无源混频器 8
2.4.2 有源混频器 9
2.5 小结 12
第3章基于GaAs pHEMT的Gilbert混频器的设计 14
3.1 设计指标 14
3.2 设计准备 14
3.2.1 PDK工艺库 14
3.2.2 ADS仿真器 15
3.3 折叠型Gilbert混频器各级电路设计 16
3.3.1 跨导级电路设计 17
3.3.2 开关级电路设计 18
3.3.3 负载级电路设计 20
3.4 基于ADS的折叠型Gilbert混频器的仿真及结果分析 20
3.4.1 直流仿真 20
3.4.2 谐波仿真 20
3.4.3 转换增益仿真 21
3.4.4 噪声系数仿真 22
3.4.5 线性度仿真 23
3.4.6 带宽仿真 24 [资料来源：https://www.doc163.com]
3.4.7 结果分析 25
3.5 小结 25
第4章总结及展望 26
4.1 总结 26
4.2 展望 26
参考文献 27
致谢 28 [资料来源：Doc163.com]